ترانزیستور P80NE06

Marking Code: P80NE06(E30)

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Pdⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V

|Id|ⓘ - Maximum Drain Current: 80 A

Tjⓘ - Maximum Junction Temperature: 175 °C

Qgⓘ - Total Gate Charge: 140 nC

trⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 890 pF

Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO-220